NTR4101PT1G onsemi MOSFET P-CH 20V 1.8A SOT-23

label:
2023년9월15일 30



■ Leading −20 V Trench for Low RDS(on)
■ −1.8 V Rated for Low Voltage Gate Drive
■ SOT−23 Surface Mount for Small Footprint
■ NTRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
■ These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant


CATALOG
NTR4101PT1G COUNTRY OF ORIGIN
NTR4101PT1G PARAMETRIC INFO
NTR4101PT1G PACKAGE INFO
NTR4101PT1G MANUFACTURING INFO
NTR4101PT1G PACKAGING INFO
NTR4101PT1G ECAD MODELS
NTR4101PT1G APPLICATIONS


COUNTRY OF ORIGIN
Malaysia
China
Japan
Taiwan (Province of China)
Thailand
United States of America


PARAMETRIC INFO
Channel Type P
Channel Mode Enhancement
Configuration Single
Maximum Drain Source Voltage (V) 20
Maximum Continuous Drain Current (A) 2.4
Maximum Gate Source Voltage (V) ±8
Maximum Drain Source Resistance (mOhm) 85@4.5V
Typical Gate Charge @ Vgs (nC) 7.5@4.5V
Operating Junction Temperature (°C) -55 to 150
Maximum Power Dissipation (mW) 1250
Process Technology PowerTrench
Minimum Gate Threshold Voltage (V) 0.4
Category Power MOSFET
Typical Gate to Drain Charge (nC) 2.2
Typical Output Capacitance (pF) 100
Typical Gate to Source Charge (nC) 1.2
Maximum Junction Ambient Thermal Resistance 300°C/W
Typical Gate Resistance (Ohm) 6.5
Maximum Positive Gate Source Voltage (V) 8
Typical Input Capacitance @ Vds (pF) 675@10V
Typical Gate Threshold Voltage (V) 0.72
Typical Reverse Transfer Capacitance @ Vds (pF) 75@10V
Typical Reverse Recovery Charge (nC) 1008
Typical Diode Forward Voltage (V) 0.82
Maximum Diode Forward Voltage (V) 1.2
Typical Reverse Recovery Time (ns) 12.8
Typical Forward Transconductance (S) 7.5
Maximum Pulsed Drain Current @ TC=25°C (A) 18
Typical Turn-On Delay Time (ns) 7.5
Typical Turn-Off Delay Time (ns) 30.2
Typical Fall Time (ns) 21
Typical Rise Time (ns) 12.6
Maximum Gate Source Leakage Current (nA) 100
Maximum Gate Threshold Voltage (V) 1.2
Maximum IDSS (uA) 1
Number of Elements per Chip 1
Minimum Storage Temperature (°C) -55
Maximum Storage Temperature (°C) 150
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Tradename PowerTrench®


PACKAGE INFO
Supplier Package SOT-23
Basic Package Type Lead-Frame SMT
Pin Count 3
Lead Shape Gull-wing
PCB 3
Tab N/R
Pin Pitch (mm) 0.95
Package Length (mm) 2.9
Package Width (mm) 1.3
Package Height (mm) 0.94
Package Diameter (mm) N/R
Package Overall Length (mm) 2.9
Package Overall Width (mm) 2.4
Package Overall Height (mm) 1
Seated Plane Height (mm) 1
Mounting Surface Mount
Package Weight (g) N/A
Package Material Plastic
Package Description Small Outline Transistor
Package Family Name SOT
Jedec TO-236AB
Package Outline Link to Datasheet


MANUFACTURING INFO
MSL 1
Maximum Reflow Temperature (°C) 260
Reflow Solder Time (Sec) 30
Number of Reflow Cycle 3
Standard N/A
Reflow Temp. Source Link to Datasheet
Maximum Wave Temperature (°C) N/R
Wave Solder Time (Sec) N/R
Lead Finish(Plating) Matte Sn annealed
Under Plating Material N/A
Terminal Base Material FeNi Alloy
Number of Wave Cycles N/R


PACKAGING INFO
Packaging Suffix T1
Packaging Tape and Reel
Quantity Of Packaging 3000
Reel Diameter (in) 7
Reel Width (mm) 8.4(Min)
Tape Pitch (mm) 4
Tape Width (mm) 8
Feed Hole Pitch (mm) 4
Hole Center to Component Center (mm) 2
Component Orientation Single Pin At Sprocket Hole
Packaging Document Link to Datasheet
Tape Type Embossed


ECAD MODELS




APPLICATIONS
• Load/Power Management for Portables
• Load/Power Management for Computing
• Charging Circuits and Battery Protection
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